BNC-B

Flat View
See by year
Monthly View
See by month
Weekly View
See by week
Daily View
See Today
Search
Search
Imaging and tuning Schrödinger and Dirac charge carrier dynamics inside nanodevices 
Tuesday, 09 April 2019, 11:30
This email address is being protected from spambots. You need JavaScript enabled to view it.  

Imaging and tuning Schrödinger and Dirac charge carrier dynamics inside nanodevices

Prof. Benoît Hackens

Institut de la Matière Condensée et des Nanosciences (IMCN), Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium

Abstract: Quantum transport in nanodevices is usually probed thanks to measurements of the electrical resistance or conductance, which lack the spatial resolution necessary to probe local-scale electron behaviour inside the devices. Here, we will discuss how to get real-space information on peculiar quantum transport phenomena inside various mesoscopic devices. The results were obtained using low temperature scanning gate microscopy (SGM), which consists in mapping the electrical conductance of a device as an electrically-biased sharp metallic tip scans in its vicinity [1].
If the tip-induced perturbation is relatively small, SGM is an imaging technique giving access to the local density of states inside mesoscopic devices [2]. When the tip-induced perturbation is larger, it can be viewed as a moving scattering center whose shape can be tuned by varying the tip voltage and tip-sample distance. We will illustrate how both SGM modes helped to unveil peculiar aspects of relativistic charge carrier dynamics within graphene devices [3-4], and within devices carved out from semiconductor heterostructure hosting "conventional" two-dimensional electron systems [5-6]. Depending on the type of charge carriers, different fundamental scattering phenomena determine their interaction with the scattering potential, from “simple” backscattering to Klein tunnelling, and this can also be evidenced and studied in detail thanks to SGM experiments.


[1] M.A. Eriksson et al., Appl. Phys. Lett. 69, 671 (1996); M. Topinka et al., Science 289, 671 (2000).
[2] F. Martins et al., Phys. Rev. Lett. 99, 136807 (2007).
[3] D. Cabosart et al., Nano Lett. 17, 1344 (2017).
[4] B. Brun et al., arXiv:1811.02929.
[5] B. Brun et al., Nature Comm. 5, 4290 (2014).
[6] S. Toussaint et al., Phys. Rev. B 98, 075310 (2018).

Location ICN2 Seminar Hall, ICN2 Building, UAB
Contact This email address is being protected from spambots. You need JavaScript enabled to view it.
https://icn2.cat/en/events/eventdetail/1028/imaging-and-tuning-schroedinger-and-dirac-charge-carrier-dynamics-inside-nanodevices

Back

400 LOGO Y TEXTO BNC-b

Contact Us

  • Phone: +34 935 801 853 (243)

Newsletter

Subscribe to our mailing list